technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened npn low power silicon transistor qualified per mil-prf-19500/368 t4-lds-0134 rev. 1 (091510) page 1 of 2 devices levels 2n3439 2n3440 jansm C 3k rads (si) 2n3439l 2n3440l jansd C 10k rads (si) 2n3439ua 2n3440ua jansp C 30k rads (si) jansl C 50k rads (si) jansr C 100k rads (si) absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol 2n3439 2n3440 unit collector-emitter voltage v ceo 350 250 vdc collector-base voltage v cbo 450 300 vdc emitter-base voltage v ebo 7.0 vdc collector current i c 1.0 adc total power dissipation ua @ t a = +25c (1) @ t c = +25c (2) @ t sp = +25c (3) p t 0.8 5.0 2.0 w operating & storage temperature range t op , t stg -65 to +200 c 1) derate linearly @ 4.57mw/c for t a > +25c 2) derate linearly @ 28.5mw/c for t c > +25c 3) derate linearly @ 14mw/c for t sp > +25c electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. ma x. unit off characteristics collector-emitter breakdown voltage i c = 10madc r bb1 = 470 ;v bb1 = 6v l = 25mh (min); f = 30 C 60hz 2n3439 2n3440 v (br)ceo 350 250 vdc collector-emitter cutoff current v ce = 300vdc v ce = 200vdc 2n3439 2n3440 i ceo 2.0 2.0 adc emitter-base cutoff current v eb = 7.0vdc i ebo 10 adc collector-emitter cutoff current v ce = 450vdc, v be = -1.5vdc v ce = 300vdc, v be = -1.5vdc 2n3439 2n3440 i cex 5.0 5.0 adc collector-base cutoff current v cb = 360vdc v cb = 250vdc v cb = 450vdc v cb = 300vdc 2n3439 2n3440 2n3439 2n3440 i cbo 2.0 2.0 5.0 5.0 adc to-5 * 2n3439l, 2n3440l to-39 * (to-205ad) 2n3439, 2n3440 ua 2n3439ua, 2n3440ua * see appendix a for package outline downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened npn low power silicon transistor qualified per mil-prf-19500/368 t4-lds-0134 rev. 1 (091510) page 2 of 2 electrical characteristics (t a = +25c, unless otherwise noted) (cont.) parameters / test conditions symbol min. max. unit on characteristics (3) forward-current transfer ratio i c = 20madc, v ce = 10vdc i c = 2.0madc, v ce = 10vdc i c = 0.2madc, v ce = 10vdc h fe 40 30 10 160 collector-emitter saturation voltage i c = 50madc, i b = 4.0madc v ce(sat) 0.5 vdc base-emitter saturation voltage i c = 50madc, i b = 4.0madc v be(sat) 1.3 vdc dynamic characteristics parameters / test conditions symbol min. max. unit magnitude of common emitter small-signal short-circuit forward current transfer ratio i c = 10madc, v ce = 10vdc, f = 5.0mhz |h fe | 3.0 15 forward current transfer ratio i c = 5.0madc, v ce = 10v, f = 1.0khz h fe 25 output capacitance v cb = 10vdc, i e = 0, 100khz f 1.0mhz c obo 10 pf input capacitance v eb = 5.0vdc, i c = 0, 100khz f 1.0mhz c ibo 75 pf switching characteristics parameters / test conditions symbol min. max. unit turn-on time v cc = 200vdc; i c = 20madc, i b1 = 2.0madc t on 1.0 s turn-off time v cc = 200vdc; i c = 20madc, i b1 = -i b2 = 2.0madc t off 10 s safe operating area dc tests t c = +25c, 1 cycle, t = 1.0s test 1 v ce = 5.0vdc, i c = 1.0adc both types test 2 v ce = 350vdc, i c = 14madc 2n3439 test 3 v ce = 250vdc, i c = 20madc 2n3440 (3) pulse test: pulse width = 300s, duty cycle 2.0% downloaded from: http:///
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